发明名称 |
METHOD AND APPARATUS FOR PREDICTING PLASMA-PROCESS SURFACE PROFILES |
摘要 |
The invention provides a method for predicting a process surface profile that a given plasma process will create on a process substrate. The prediction is based on a test surface profile, the experimental outcome of a test process which is in general different from the plasma process of interest. In another aspect, the invention provides a technique for defining a plasma process that will produce a desired surface profile. Thus, in related aspects, the invention also provides apparatus for predicting a process surface profile and determining process values, a method of configuring a plasma reactor, a method of making semiconductor devices requiring limited empirical calibration, and a device made according to the method.
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申请公布号 |
WO9945567(A1) |
申请公布日期 |
1999.09.10 |
申请号 |
WO1999US03551 |
申请日期 |
1999.02.18 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
BARONE, MARIA, E.;GOTTSCHO, RICHARD, A.;VAHEDI, VAHID |
分类号 |
C23C14/54;C23C16/52;H01J37/32;(IPC1-7):H01J37/32 |
主分类号 |
C23C14/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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