Method for fabricating semiconductor device

摘要

A method for fabricating highly integrated semiconductor devices with capacitors having a dielectric film comprised of a thin film exhibiting a high dielectric constant to obtain a sufficient capacitance, involving the formation of an under electrode over a wafer formed with an oxide film at a high temperature, and annealing the resulting wafer in a vacuum such that the under electrode has a tight and smooth structure. By virtue of the tight and smooth structure of the under electrode, subsequent processing steps can be easily carried out. It is also possible to achieve an improvement in the reliability and uniformity of semiconductor devices as well as a high integration of such semicoductor devices.