发明名称 |
Method of forming a capacitor |
摘要 |
A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing an electrically conductive first layer over the node; c) providing an electrically insulative barrier second layer over the first conductive layer; d) providing a third layer over the electrically insulative barrier layer, the third layer comprising a material which is either electrically conductive and resistant to oxidation, or forms an electrically conductive material upon oxidation; e) providing an insulating inorganic metal oxide dielectric layer over the electrically conductive third layer; f) providing an electrically conductive fourth layer over the insulating inorganic metal oxide dielectric layer; and g) providing an electrically conductive interconnect to extend over the second insulative layer and electrically interconnect the first and third conductive layers. A capacitor construction having such a dielectric layer in combination with the barrier layer and electrical interconnect of a first capacitor plate is disclosed.
|
申请公布号 |
US5985714(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19970858027 |
申请日期 |
1997.05.16 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU, GURTEJ S.;SCHUELE, PAUL;KINNEY, WAYNE |
分类号 |
H01L21/02;H01L21/8242;H01L21/8246;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|