Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity

摘要

A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.