Semiconductor memory device capable of effectively resetting sub word lines

摘要

In a semiconductor memory device, a plurality of main word lines a plurality of pairs of first and second sub word lines, a plurality of first sub word line drive circuits and a plurality of second sub word line drive circuits are provided. Each of the first word line drive circuits is connected to one of the main word lines and at least two pairs of the pairs of first and second sub word lines for activating and deactivating one of the first sub word lines and deactivating the second sub word lines. Each of the second sub word line drive circuits is connected to one of the main word lines and at least two pairs of the pairs of first and second sub word lines for activating and deactivating one of the second sub word lines and deactivating the first sun word lines.