METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to prevent short-circuit and notching of a conductive layer by forming a conductive layer. CONSTITUTION: A lower pattern(12) having a predetermined height and width is formed on an upper portion of a semiconductor substrate(11). A conductive layer is deposited on an upper portion of the lower pattern(12) and the semiconductor substrate(11). A positive photoresist layer is applied thereon. An exposure process is performed to form a conductive layer pattern(18) on a predetermined portion of the photoresist layer. A groove is formed by removing the exposed photoresist layer. An insulating layer is formed on the groove. A photoresist pattern is formed by etching the exposed photoresist layer. The conductive layer pattern(18) is formed by etching the exposed conductive layer. An upper layer of the conductive layer is removed.