METHOD FOR OPENING PAD AND FUSE OF HYBRID SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method is provided to leave an insulating layer on a fuse by a desired thickness and to minimize loss of a metal layer of a pad, by controlling a thickness of a photoresist layer firstly applied on a protection layer. CONSTITUTION: A protecting insulation layer is formed in a semiconductor memory device which has a cell transistor(14), a bit line contact electrode and a multilayered metal interconnection on a substrate(10) of a memory cell region(100) and includes a fuse on a substrate of a peripheral circuit region(200). The first and second photoresist layers(40,42) regarding which an exposure process is performed by using a G line and an I line, are sequentially applied on the protecting insulation layer to prevent loss caused by an etch rate of a metal interconnection and an interlayer dielectric. An exposure and development process is performed regarding the second photoresist layer by using a mask for opening a pad(30) and the fuse. An exposure and development is performed regarding the first photoresist layer in the peripheral circuit region to etch the first photoresist layer. The structure is etched by using CxFy+Ar plasma gas wherein an etch selectivity of the first photoresist layer and an insulating layer is regulated, so that a pad surface of a cell region is exposed and a predetermined thickness of the insulating layer on the fuse of a peripheral circuit region is left.