POWER SEMICONDUCTOR DEVICE

摘要

A first semiconductor switching circuit and a second semiconductor switching circuit in the form of an intelligent power module including IGBTs (2) are connected in parallel with their IGBTs (2A, 2B) connected together both at collectors and at emitters; the emitter connection is such that the emitters are connected with respective resistors (16A, 16B) of the same resistance, which are connected at auxiliary terminals (15A, 15B) through a conductor (18). The gates of IGBTs (2A, 2B) are connected together through a conductor (17) by a ferrite bead core (19) having high impedance at a predetermined frequency.