| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that it is difficult to lower the cost of a semiconductor light-emitting element of which power consumption and operating voltage are low. SOLUTION: A buffer layer 12 of a composite layer structure, where a plurality of first layers 12a composed of AlN and second layers 12b composed of GaN are laminated on a substrate 11 composed of low-resistance silicon, is installed. An n-type semiconductor region 13 composed of gallium nitride, an active layer 14 made of gallium indium nitride and a p-type semiconductor region 15 composed of gallium nitride are formed sequentially on the buffer layer 12. An anode electrode 17 is provided on the region 15, and a cathode electrode 18 is provided on the substrate 11. |
