| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method, in which the contact resistance of a semiconductor layer with a high-melting point metal silicide layer can be lowered, even via a high-temperature heating process in a manufacturing method for a semiconductor substrate or an optoelectric device, having a structure in which the semiconductor layer and a conductive layer containing the high-melting point metal silicide layer are electrically connected. SOLUTION: The semiconductor layer 202 is formed on a substrate 201. A patterned insulating film 203 is formed on the semiconductor layer 202. In a state in which a doped amorphous silicon film 209 and a high-melting point metal silicide film 206a are formed sequentially on the semiconductor layer 202 and the insulating film 203, a heating treatment at 900$0C or higher is executed. Thereby, a doped polysilicon film 204, which contains high- concentration impurities, is formed between the semiconductor layer 202 and a high-melting point metal silicide layer 206. As a result, the contact resistance of the semiconductor layer 202 with the metal silicide film 206 can be lowered.</p> |
