| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method by which the crystallinity of a region, which is irradiated with a laser beam several times, can be improved. SOLUTION: A first crystalline region is formed by performing laser annealing on part of an amorphous semiconductor film, using a laser beam having a wavelength in the range of 370-650 nm. When performing the laser annealing, it is preferable to project the laser beam by processing the beam, so that the beam may become a linear beam on the face to be irradiated or its vicinity. Then a second crystal region is formed by performing laser annealing on a region of the amorphous semiconductor film containing part of the first crystal region. Since crystallinity of the first crystal region, second crystal region, and the overlapping region of the first and second crystalline areas thus formed are the same, a crystalline semiconductor film having good crystallinity can be obtained. When the crystalline semiconductor film is used as the active layer of a TFT and the electrical characteristics of the active layer is measured, the characteristics hardly fluctuate.</p> |
