发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of protecting a thin wafer against cracking or chipping in a process of cutting chips out of the wafer. SOLUTION: Resin is applied on the surface of a wafer 1, on which bumps 2 are formed for sealing so as to cover the bumps 2, the sealing resin 3 is ground until the bumps 2 are exposed, dicing grooves 11 are formed by dicing the wafer 1 from above its surface, on which sealing resin is formed as deep as above the thickness of a finished chip, and the backside of the diced wafer 1 is ground with a grinding stone 12, to divide the wafer into separate chips 7. The wafer is then sealed up with resin first and then diced to the depth prescribed, and since the rear of the wafer is ground until grounding reaches to the diced part, and then the wafer is divided by each chip, for example, a wafer reduced in thickness by grinding up to 50μm can be protected fully against defects such as cracks or chipping in the middle of processes.
申请公布号 JP2002016022(A) 申请公布日期 2002.01.18
申请号 JP20000196233 申请日期 2000.06.29
申请人 TOSHIBA CORP 发明人 ONO JUNICHI;SATO TAKAO;TAKANO MITSUNARI;DOI MASAYUKI
分类号 H01L21/56;H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/56
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