发明名称 SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To prevent the transparency of a transparent conductive film from being impaired and raise the quality by a method wherein with the conductive film formed on a substrate, a reduction preventive layer consisting of a compound layer containing a group III element and nitrogen is formed on the conductive film. SOLUTION: A substrate for using is a light-transmitting substrate and as the substrate, a tabular body consisting of a transparent inorganic material, such as glass, quartz and ceramics, or a transparent organic resin, such as a high-molecular film and a fluororesin, is used. As a transparent conductive film which is formed on the substrate, an oxide film containing indium or tin, such as an indium-tin oxide film, a tin oxide film and an indium oxide film, is preferable. Moreover, a reduction preventive layer consists of a compound layer containing a group III element and nitrogen and for preventing the conductive film from being exposed to active hydrogen and from being reduced, a semiconductor layer is reacted with an organic metallic compound layer containing active nitrogen and a group III element under the condition that the semiconductor layer does not contain active hydrogen before the formation of the semiconductor layer to form the reduction preventive layer. Thereby, a high- quality element can be obtained without impairing the transparency of the conductive film.</p>
申请公布号 JP2000232256(A) 申请公布日期 2000.08.22
申请号 JP19990032018 申请日期 1999.02.09
申请人 FUJI XEROX CO LTD 发明人 YAGI SHIGERU;SUZUKI SEIJI;IWANAGA TAKESHI
分类号 H01L21/205;H01L33/32;H01L33/34;H01S5/00;H01S5/323 主分类号 H01L21/205
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