SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory in which current consumption is less. SOLUTION: An eDRAM is provided with VDC 1a-1d generating an internal power source potential VCCS for a sense amplifier band SA by stepping down an external power source potential EXVCC and VDC 2a-2d generating an internal power source potential VCC1 for a column decoder 5 by stepping down an external power source potential EXVCC, a response characteristic of the VDC 1a-1d is improved by increasing a through current of the VDC 1a-1d only in a period required for amplifying operation of the sense amplifier 32. Therefore, current consumption is made less comparing with conventional one in which a through current of VDC is made a fixed high level.