发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURE THEREOF, CIRCUIT BOARD, AND ELECTRONIC DEVICE
摘要 A method of manufacturing a semiconductor device comprises a first step of providing an anisotropic conductive material (16) between one surface (18) of a substrate (12) where a wiring pattern (10) is formed and one surface (24) of a semiconductor element (20) where electrodes (22) are formed; and a second step of applying pressure between the semiconductor element (20) and the substrate (12) so that the wiring pattern (10) and electrode (22) can be connected electrically and that the anisotropic conductive material (16) can extend to at least part of the sides (28) of the semiconductor element (20).
申请公布号 WO0002244(A1) 申请公布日期 2000.01.13
申请号 WO1999JP03418 申请日期 1999.06.25
申请人 SEIKO EPSON CORPORATION;HASHIMOTO, NOBUAKI 发明人 HASHIMOTO, NOBUAKI
分类号 H01L21/48;H01L21/56;H01L21/60;H01L23/31;H01L23/552;H05K1/11;H05K1/18;H05K3/28;H05K3/32 主分类号 H01L21/48
代理机构 代理人
主权项
地址