发明名称 |
Programmable resistance memory element with indirect heating |
摘要 |
The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.
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申请公布号 |
US6969869(B2) |
申请公布日期 |
2005.11.29 |
申请号 |
US20030655975 |
申请日期 |
2003.09.05 |
申请人 |
OVONYX, INC. |
发明人 |
HUDGENS STEVE;DAVIS JOHN D.;MCINTYRE THOMAS J.;RODGERS JOHN C.;STURCKEN KEITH K. |
分类号 |
H01L23/525;H01L45/00;(IPC1-7):H01L29/04 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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