发明名称 SUBLITHOGRAPHIC CONTACT STRUCTURE, IN PARTICULAR FOR A PHASE CHANGE MEMORY CELL, AND FABRICATION PROCESS THEREOF
摘要 A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.
申请公布号 US2006284160(A1) 申请公布日期 2006.12.21
申请号 US20060468153 申请日期 2006.08.29
申请人 OVONYX, INC. 发明人 KHOURI OSAMA;POLLACCIA GIORGIO;PELLIZZER FABIO
分类号 H01L47/00;H01L27/24;H01L45/00 主分类号 H01L47/00
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