| 摘要 |
A method of manufacturing crystalline semiconductor thin film is provided to obtain the low doped semiconductor film of the low density which is near to monocrystal without the process of separately preheating the process by illuminating the low doped semiconductor layer. In a method of manufacturing crystalline semiconductor thin film, the low doped semiconductor layer is formed on substrate(S205). A light is irradiated on the low doped semiconductor layer, and a photo-charge is generated(S210). The low doped semiconductor layer inductively is heated, and it is crystallized(S220). The alternating current is flowed in the induction coil on the low doped semiconductor layer and the AC magnetic field is formed. The photo-charge is accelerated by formed AC magnetic field.
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