| 摘要 |
A temperature detection circuit includes a temperature dependent voltage generation circuit for generating a temperature dependent voltage VR, a bandgap circuit for generating a temperature independent voltage VBG, and a comparator for comparing the temperature dependent voltage VR generated in the temperature dependent voltage generation circuit with the temperature independent voltage VBG generated in the bandgap circuit, and based on the above comparison result, outputting a temperature detection signal which indicates the high-low relationship between the temperature dependent voltage VR and the temperature independent voltage VBG. The above bandgap circuit includes an N-channel transistor source of which is connected to an input terminal of the comparator and supplies a current having a positive temperature characteristic, and an amplifier for driving gate of the N-channel transistor so that the source potential of the N-channel transistor is made to have a constant potential independent of the temperature of the measurement object.
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