| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing erroneous read-out.SOLUTION: In a memory cell having a first transistor 101, a second transistor 102 and a third transistor 105, the potential of fourth wiring 109 is GND at the time of data writing, the potential of the fourth wiring 109 is VDD at the time of data read-out, the potential of third wiring 108 is GND in any of data writing and data read-out, a first capacitive element 103 and a fourth capacitive element 104 are connected in series since the first transistor 101 is in the off-state at the time of data read-out, a portion of electric charges accumulated in the second capacitive element 104 moves to the first capacitive element 103 and the potential of a node 112 increases since the potential of a second electrode of the second capacitive element 104 increases in this state.SELECTED DRAWING: Figure 1 |
