Magnetic memory and method of manufacturing the same

摘要

According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

主权项

1. A magnetic memory comprising:
a conductive layer containing a first metal material; a stacked body formed above the conductive layer, and comprising a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer formed between the first magnetization film and the second magnetization film; and an insulating layer formed on a side face of the stacked body, and containing an oxide of the first metal material, wherein the first magnetization film and/or the second magnetization film includes a first region positioned in a central portion and a second region positioned in an edge portion, the second region containing As, P, Ge, Ga, Sb, In, Ar, He, F, CI, Br, I, Si, B, C, Zr, Tb, S, Se, or Ti.