Light-emitting diode

摘要

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.

主权项

1. A light-emitting diode (LED), comprising:
a first type semiconductor layer having a first region and a second region, wherein the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density; an active layer joined with the first type semiconductor layer; a second type semiconductor layer joined with the active layer; and at least one current controlling structure joined with at least one of the first type semiconductor layer and the second type semiconductor layer, the current controlling structure having at least one current-injecting zone that allows carriers to pass through, wherein a vertical projection of the second region on the current controlling structure at least partially overlaps with the current-injecting zone.