| 发明名称 | Fin field effect transistor (FinFET) device and method for forming the same | ||
| 摘要 | A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure also includes a gate electrode formed over the fin structure, and the gate electrode has a grid-like pattern when seen from a top-view. | ||
| 申请公布号 | US9385235(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201414291899 | 申请日期 | 2014.05.30 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Chen Huang-Kui |
| 分类号 | H01L29/02;H01L29/78;H01L29/423;H01L29/417;H01L29/06;H01L29/10;H01L29/49;H01L21/28;H01L21/3213;H01L29/66 | 主分类号 | H01L29/02 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A fin field effect transistor (FinFET) device structure, comprising: a substrate; a fin structure extending above the substrate; and a gate electrode formed over the fin structure, wherein the gate electrode has a plurality of first portions and a plurality of second portions, and wherein the first portions are perpendicular to the second portions. | ||
| 地址 | Hsin-Chu TW | ||