| 发明名称 | Semiconductor device having high-K gate dielectric layer | ||
| 摘要 | A semiconductor device includes a substrate and a gate structure over the substrate. The gate structure includes a dielectric portion and an electrode portion that is disposed over the dielectric portion. The dielectric portion includes a carbon-doped high dielectric constant (high-k) dielectric layer over the substrate and a carbon-free high-k dielectric layer adjacent to the electrode portion. | ||
| 申请公布号 | US9385208(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201514665612 | 申请日期 | 2015.03.23 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Lee Kun-Yu;Yao Liang-Gi;Okuno Yasutoshi;Wann Clement Hsingjen |
| 分类号 | H01L29/78;H01L29/51;H01L21/28;H01L29/423;H01L29/66 | 主分类号 | H01L29/78 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A semiconductor device comprising: a substrate; and a gate structure over the substrate, wherein the gate structure comprises a dielectric portion and an electrode portion that is disposed over the dielectric portion,wherein the dielectric portion comprises a carbon-doped high dielectric constant (high-k) dielectric layer over the substrate and a carbon-free high-k dielectric layer adjacent to the electrode portion. | ||
| 地址 | TW | ||