Semiconductor device and method of forming supporting layer over semiconductor die in thin fan-out wafer level chip scale package

摘要

A semiconductor device includes a semiconductor die. An encapsulant is formed around the semiconductor die. A build-up interconnect structure is formed over a first surface of the semiconductor die and encapsulant. A first supporting layer is formed over a second surface of the semiconductor die as a supporting substrate or silicon wafer disposed opposite the build-up interconnect structure. A second supporting layer is formed over the first supporting layer an includes a fiber enhanced polymer composite material comprising a footprint including an area greater than or equal to an area of a footprint of the semiconductor die. The semiconductor die comprises a thickness less than 450 micrometers (μm). The thickness of the semiconductor die is at least 1 μm less than a difference between a total thickness of the semiconductor device and a thickness of the build-up interconnect structure and the second supporting layer.

主权项

1. A method of making a semiconductor device, comprising:
providing a semiconductor die; forming a first supporting layer over the semiconductor die; forming an encapsulant around the semiconductor die and over a side surface of the first supporting layer; and forming an interconnect structure over the semiconductor die and encapsulant opposite the first supporting layer, wherein a surface of the encapsulant opposite the interconnect structure is devoid of the first supporting layer.