Polysilicon resistor structure having modified oxide layer

摘要

Various embodiments include resistor structures. Particular embodiments include a resistor structure having multiple oxide layers, at least one of which includes a modified oxide. The modified oxide can aid in controlling the thermal capacitance and the thermal time constant of the resistor structure, or the thermal dissipation within the resistor structure.

主权项

1. A resistor structure comprising:
a first oxide layer; a first lateral contact layer overlying the first oxide layer, the first lateral contact layer including:
a polysilicon region overlying a first portion of the first oxide layer; andat least one contact region coplanar with the polysilicon region and overlying a second portion of the first oxide layer distinct from the first portion of the first oxide layer; a second oxide layer overlying the first lateral contact layer; a first via contacting the at least one contact region and contacting the second oxide layer; a first contact pad overlying the first via and contacting the second oxide layer; a second via contacting the first contact pad and contacting the second oxide layer; and a second contact pad overlying the second via and the second oxide layer, wherein at least one of the first oxide layer or the second oxide layer includes a modified oxide for controlling at least one of a resistance of the resistor structure or a thermal dissipation within the resistor structure, the modified oxide including a silicon-on-insulator (SOI) oxide material including an OH group.