Semiconductor device and fabrication method thereof

摘要

A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a fin-shaped buffer layer formed on the surface of the substrate. A QW material layer is formed on the surface of the fin-shaped buffer layer. A barrier material layer is formed on the QW material layer. The QW material layer is suitable for forming an electron gas therein. Thereby the short-channel effect is improved, while high mobility of the semiconductor device is guaranteed. In addition, according to the present disclosure, thermal dissipation of the semiconductor device may be improved, and thus performance and stability of the device may be improved.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing a substrate structure including a substrate and a fin-shaped buffer layer formed over a surface of the substrate; forming a Quantum Well (QW) material layer on a surface of the fin-shaped buffer layer, the QW material layer being suitable for forming an electron gas therein; and forming a barrier material layer on the QW material layer, wherein the substrate further includes an insulating portion adjacent to the fin-shaped buffer laver, the insulating portion being formed along both sides of the buffer layer on the surface of the substrate which is not covered by the buffer layer, and wherein the forming a QW material layer on the surface of the fin-shaped buffer layer comprises: forming a QW material layer on the surface of the fin-shaped buffer layer that is not covered by the insulating portion.