发明名称 |
MANUFACTURE OF FINE SEMICONDUCTOR PARTICLES |
摘要 |
PROBLEM TO BE SOLVED: To stably manufacture fine semiconductor particles by forming the particles through the heterojunction of semiconductor micro-clusters with sensitized pigment molecules by passing a beam through a sensitized pigment vapor. SOLUTION: Plasma is produced from a solid material 5 which is a raw material by irradiating the material 5 with light 2 in a vacuum atmosphere. At the time of irradiating the material 5 with the light 2, the light 2 is converged onto the surface of the material through a lens 4, etc., so that the plasma can be produced efficiently. Formed semiconductor clusters are jetted into an ultra-high vacuum tank with a high-speed inert gas flow to form a semiconductor cluster beam 8. The beam 8 is introduced to a sensitized pigment vapor chamber 9 provided in the ultra-high vacuum tank and, in the chamber 9, the semiconductor clusters form fine semiconductor particles through the heterojunction with a sensitized pigment 10 while passing through the chamber 9. |
申请公布号 |
JPH10149985(A) |
申请公布日期 |
1998.06.02 |
申请号 |
JP19960308214 |
申请日期 |
1996.11.19 |
申请人 |
MITSUBISHI SOGO KENKYUSHO:KK |
发明人 |
ISHIKAWA MASAMICHI;KAMEI SHINICHI;YOGO KATSUNORI;ODAWARA OSAMU |
分类号 |
G03C1/10;B01J19/08;B01J35/02;C01B3/04;C01G11/02;C01G23/04;C23C14/00;H01L21/203;H01L21/205;H01L31/04 |
主分类号 |
G03C1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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