| 摘要 |
PROBLEM TO BE SOLVED: To easily obtain a semiconductor light emitting device having current restriction structure or optical guide structure suited for holding the crystallinity of a II-VI semiconductor of a light emitting device by forming an oxide region on the II-VI group semiconductor to restrict the current flowing area. SOLUTION: A semiconductor laminate structure includes an Mg-contained II-VI group compd. semiconductor clad layer or optical guide layer and protected electrode bonded parts (with p or n electrodes formed there). The clad or optical guide layer is oxidized to form oxide regions therein. On a substrate 1, e.g. are grown a Cl-doped ZnSe layer 2, a clad layer 3, a superlattice optical guide layer 4, an active layer 5, a superlattice optical guide layer 6, clad layer 7 and a contact layer 8. Stripes are formed on a central part of the contact layer 8 by using a photoresist 30. By using the photo resist 30 as a mask, the contact layer 8 is removed and oxide regions 9 are formed at both sides of the clad layer 7, except the central part to form a current path. |
