| 摘要 |
PROBLEM TO BE SOLVED: To form the thin film of CuInSe calcopyrite type compound with an improved crystallizability and a strong adhesion strength and at the same time achieve an efficient solar cell using the thin film. SOLUTION: First, materials (for example Cu, In, Ga, Se, and S) of a film are loaded into each closed type crucible (Step S1), they are sprayed into a high vacuum from a spraying nozzle provided at the crucible (Step S2), and a mass-shaped atom group (Cluster) where 5×10<2> -2×10' atoms are loosely connected is formed by the overcooling phenomenon (operation) due to adiabatic expansion in the high vacuum from the raw materials sprayed from the spraying nozzle (Step S3). Then, by ionizing and accelerating each mass-shaped atom group, the thin films of CuInSe2 , CuInx Ga1-x Se2 , uInSy Se2-y and CuInx Ga1-x Sy Se2-y are formed on a substrate (Step S4). |
