发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To utilize a quantum cascade(QC) laser having a simple structure for giving large freedom on the design of a QC type laser to the designer of a device. SOLUTION: A disclosed unipolar QC laser has an adjacent active region isolated by a super-lattice carrier injection/reduction region 11, and contains a multiple substantially quite the same active region. A specified active region 10 comprises a single quantum well 13 having at least two electronic states. The emission of laser beams is acquired without the population inversion of total internal sub-hands. The presence of a local population inversion is considered in response to electronic energy within the range of approximately optical phonon-energy (-35meV) from the bottom of low sub-bands in a small region in a (k) space in the vicinity of k=0 in place of the emission of laser beams. The semiconductor laser is used for substantially improving even the heat characteristics of any QC laser.
申请公布号 JPH09102653(A) 申请公布日期 1997.04.15
申请号 JP19960199944 申请日期 1996.07.30
申请人 A T & T I P M CORP 发明人 FUEDERIKO KIYAPASO;ARUFURETSUDO II CHIYOO;JIEROOMU FUAISUTO;ARUBAATO RII HATSUCHINSON;KARURO SHIRUTORI;DEBORA RII SHIBUKO
分类号 H01L33/00;H01L21/20;H01S3/106;H01S5/00;H01S5/062;H01S5/12;H01S5/34;H01S5/343 主分类号 H01L33/00
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