发明名称 |
Method for the manufacture of semiconductor device using refractory metal in a lift-off step |
摘要 |
A semiconductor manufacturing method which uses a refractory metal as a lift-off material and employs, in combination, a dry etching process suitable for forming a miniature pattern without undercutting and a film deposition method for deposing the lift-off material with directionality in a direction perpendicular to the substrate surface. A semiconductor device is fabricated by a lift-off method which is free from the fear of contamination, permits easy lift off of the lift-off material, even if large in area, and hence suitable for the formation of a high-density pattern.
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申请公布号 |
US4448800(A) |
申请公布日期 |
1984.05.15 |
申请号 |
US19820403531 |
申请日期 |
1982.07.30 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
发明人 |
EHARA, KOHEI;MURAMOTO, SUSUMU;MORIMOTO, TAKASHI;MATSUO, SEITARO;ITSUMI, MANABU |
分类号 |
H01L21/033;H01L21/768;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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地址 |
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