| 摘要 |
PURPOSE:To enable to easily clean the window where light is made incident as well as to obtain the photo chemical vapor deposition device suitable for mass production by a method wherein a high frequency electrode is enabled to be inserted at any time between the transparent window for irradiation with light and the substrate supporting member on which the substrate is placed. CONSTITUTION:A high frequency electrode 10 is provided below a transparent window 7. Said high frequency electrode 10 is to be installed at the position where the ultraviolet rays which are made incident from a mercury lamp 8 by the rotation of a support pole through the transparent window 7. The high frequency electrode 10 is positioned as shown in the diagram when a cleaning work is performed, and after a reaction vessel 1 is evacuated using an exhaust pipe 5, CF4 or the mixed gas consisting of CF4 and 1-3% of oxygen, or the above-mentioned material which is diluted with argon and nitrogen is introduced into the reaction vessel from a gas introducing pipe 6 as etching gas. Discharge plasma is generated between the high frequency electrode 10, a holder 3 and the transparent window 7 by applying high frequency voltage from a high frequency power source 12, and a plasma etching is performed. Besides, when the wall surface of the reaction vessel 1 is cleaned, it is effective that the gas pressure is maintained at 0.5Torr or below when electricity is discharged and that plasma is spread all over the reaction vessel. |
