发明名称 INFRARED RAY IMAGE SENSOR
摘要 PURPOSE:To perform a small package by using a silicon substrate transparent for an infrared ray as a package, and forming an infrared ray filter on the back surface of the substrate to eliminate the difference of thermal expansion coefficient between an infrared ray solid state image sensor and the package. CONSTITUTION:Since an infrared light is incident from the back surface of a silicon substrate 14 and the substrate 14 is transparent for the infrared ray, the infrared lights of wavelengths lambda1, lambda2, lambda3 are incident to infrared ray solid- state image sensors 11, 12, 13 through infrared ray filters 15, 16, 17, respectively. The terminals of the sensors 11, 12, 13 are led to the periphery of the substrate 14 by multilayer wirings formed on the front surface of the substrate 14. Since the common terminal of these terminals can be coupled by wirings in the substrate 14, the number of the terminals to be led t the periphery of the substrate 14 can be minimized as required. Thus, the difference of thermal expansion coefficient between the substrate of low temperature and the sensors is eliminated, and wirings led to the terminals of the sensors can be microminiaturized similarly to an integrated circuit, and multilayer wirings can be facilitated.
申请公布号 JPS61216465(A) 申请公布日期 1986.09.26
申请号 JP19850059252 申请日期 1985.03.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 YUYA NAOKI;IWADE SHUHEI
分类号 H04N5/33;H01L27/14;H01L31/0216;H01L31/0264;H01L31/09 主分类号 H04N5/33
代理机构 代理人
主权项
地址