A method of hatching micrometric contacts in semiconductor electronic devices.

摘要

A method of hatching micrometric contacts in semiconductor electronic devices (1) having at least one intermediate dielectric layer (4), comprises the following steps: dry etching in a partially isotropic way, the dielectric layer, under an atmosphere of carbon tetrafluoride, using a photoresist removing apparatus which operates under a high pressure gas-discharge plasma; subsequent etching under reactive ionic plasma, in two respectively high and low selectively, steps with the photoresist, until the contact is hatched.