发明名称 HIGHLY HEAT-CONDUCTIVE CERAMIC ENVELOPE FOR SEMICONDUCTOR PACKAGE
摘要 PURPOSE:To improve the heat radiating property of an envelope formed from a ceramic sintered compact having specified heat conductivity by forming an oxide layer having a prescribed thickness on the entire surface of the envelope body in one body. CONSTITUTION:A binder powder of oxide of a rare earth element as a sintering auxilliary and they are compacted, dewaxed and sintered at 1,800-2,000 deg.C under pressure to form an AlN or Si3N4 sintered compact having about <=1.5% porosity and >=60W/m.k heat conductivity. An envelope is formed by grinding and polishing the sintered compact and an oxide layer having 0.1-3.0mum thickness formed from one or more kinds of oxides selected from among Al2O3, SiO2, TiO2, CaO, MgO, B2O3, Sr2O3, BaO, Na2O, K2O, Li2O and Y2O3 is formed on the surface of the envelope by heating to 1,100-1,300 deg.C in an oxidizing atmosphere to obtain the objective highly heat-conductive ceramic envelope for a semiconductor package. A similar envelope is obtd. by forming a glass coating layer made of an oxide-based brazing material.
申请公布号 JPH07187866(A) 申请公布日期 1995.07.25
申请号 JP19930336722 申请日期 1993.12.28
申请人 TOSHIBA CORP 发明人 TAMURA NARITAKA;SUGAWARA HIROSHI;OTA HIROYASU;SATOU YOSHITOSHI
分类号 C04B41/87;C04B35/581;H01L23/08 主分类号 C04B41/87
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