发明名称 |
Metal semiconductor device and method for producing the same |
摘要 |
A metal semiconductor device, in which an electrode is formed on a semiconductor substrate to form a Schottky junction therebetween, and the electrode has an oxide film having a first thickness on its upper surface and a non-oxidized portion having a second thickness from the Schottky junction. A method for producing the metal semiconductor device is also disclosed, in which a conductor layer formed on the semiconductor substrate is oxidized in a gas containing oxygen, and a capless annealing of the semiconductor substrate having the oxidized conductor layer thereon is conducted in an atmosphere containing arsenic.
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申请公布号 |
US5273937(A) |
申请公布日期 |
1993.12.28 |
申请号 |
US19910774169 |
申请日期 |
1991.10.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NISHIHORI, KAZUYA;INOUE, TOMOTOSHI;TOMITA, KENICHI;MIKAMI, HITOSHI;NAGAOKA, MASAMI;UCHITOMI, NAOTAKA |
分类号 |
H01L29/47;(IPC1-7):H01L21/283 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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