MANUFACTURE OF SEMICONDUCTOR INSULATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the processing accuracy in forming the large and small through holes with different diameters in an inter layer film. SOLUTION: When through holes 11b, 12b, 22, 23 are formed in a first interlayer insulating film 21, the through holes 12b, 22, 23 with a small diameter and the through hole 11b with a large diameter are processed in the normal shape by forming with the different processes. Further, in forming through holes 13b, 26, 27 in a second interlayer insulating film 25, the through holes 26, 27 with small diameters and the through hole 13b with a large diameter are formed by separate processes so as to process the through holes 26, 27 with a small diameter and the through hole 13b with a large diameter in the normal shape.