| 摘要 |
A method of fabricating a semiconductor light emitting device includes forming an SiON film thinner than 50 nm on a stripe region on a surface of a first semiconductor layer at a first temperature, etching the first semiconductor layer using the SiON film as a mask and forming an optical waveguide including the first semiconductor layer which is left below the SiON film, and selectively growing a second semiconductor layer as a current blocking layer where the first semiconductor layer was removed by etching, using the SiON film as a mask at a second temperature. Therefore, adhesion of the material of the current blocking layer to the surface of the selective growth mask is suppressed, and imperfect growth of the contact layer and imperfect contact of the electrode directly formed on the upper surface of the wave-guide are suppressed, respectively. In addition, the generation of dark lines due to stress between the selective growth mask and the semiconductor layer constituting the upper part of the wave-guide is suppressed, and reduction in light output power is prevented.
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