| 摘要 |
<p>PROBLEM TO BE SOLVED: To flatten interlayer insulating films, etc., of thin-film transistors(TFTs) by constituting >=1 interlayer insulating films within a semiconductor thin film of the fired matter of a coating film of perhydropolysilazane or a compsn. contg. the same. SOLUTION: The first interlayer insulating film 11 consisting of silicon oxide, etc., is formed by a CVD method, etc., on a gate electrode 10. A source electrode 13 is formed by CVD method, etc., via a contact hole 12 formed by subjecting the first interlayer insulating film 11 and a gate insulating film 9 to oxidized film etching on this first interlayer insulating film 11. The source electrode 13 is connected to a source line 2. Next, the perhydropolysilazane or the compsn. contg. the same is applied on the first interlayer insulating film 11 and the source electrode 13. This perhydropolysilazane refers to one kind of inorg. polysilazane and is a coating type coating material which is converted to silica by standby firing. The at least one interlayer insulating film 11 is thus composed of the fired matter of the coating film of such compsn.</p> |
