| 摘要 |
<p>PURPOSE:To flatten the 2-6 compound semiconductor growth starting surface on the 3-5 compound semiconductor in the order of atomic layer by depositing a thinner 2-6 compound semiconductor on the surface of the 3-5 compound semiconductor and then vaporizing again such semiconductor before it grows in the process to stack the 2-6 compound semiconductor device on the 3-5 compound semiconductor. CONSTITUTION:An n-type 3-5 compound semiconductor substrate 12 consisting of Si-added GaAs introduced into an MBE apparatus is provided with an oxide film 11. The substrate temperature is raised to remove an oxide film, the 2-6 compound semiconductor layer 21 consisting of Cl-added ZnS0.07Se0.93 (n=1X10<18>) is grown up to 10nm at the substrate temperature of 280 deg.C, the substrate temperature is further raised up to 580 deg.C to vaporize the film again to form a streak of RHEED pattern, and the temperature is then lowered to 280 deg.C, causing n-type 2-6 group semiconductor active layer 33, p-type 2-6 compound semiconductor clad layer 32 consisting of Cl-added ZnS0.07Se0.93 (n=1X10<18>; thickness, 1mum) to grow. The 2-6 compound semiconductor on the 3-5 compound semiconductor has good crystal characteristic and thereby good blue light emitting element can be realized.</p> |
