发明名称 |
Chemical vapor deposition process for depositing tungsten |
摘要 |
A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF6 and SiH4 are introduced into a deposition chamber. Next, the flow of WF6 and SiH4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF6 is reintroduced into the chamber along with H2 and B2H6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.
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申请公布号 |
US6156382(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19970857658 |
申请日期 |
1997.05.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RAJAGOPALAN, RAVI;GHANAYEM, STEVE;YAMAZAKI, MANABU;OHTSUKA, KEIICHI;MAEDA, YUJI |
分类号 |
C23C16/08;C23C16/02;C23C16/14;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):C23C16/14 |
主分类号 |
C23C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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