| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact which can be used as parts for a semiconductor production device and an electronic information apparatus and as various structural parts for vacuum devices or the like, and especially suitably used as an ultrasonic resonance plate or an ultrasonic vibration plate and which is easily machined when it is used as the ultrasonic resonance plate or the ultrasonic vibration plate and can be machined into a thin plate while maintaining sufficient mechanical strength. SOLUTION: The silicon carbide sintered compact propagates ultrasonic waves and the velocity of sound of propagating ultrasonic waves is in the range of 4,000 to 20,000 m/s. It is preferable that when the silicon carbide sintered compact is used as the ultrasonic resonance plate, the velocity of sound of the propagating ultrasonic waves is in the range of 4,000 to 11,000 m/s and when the silicon carbide sintered compact is used as the ultrasonic vibration plate, the velocity of sound of the propagating ultrasonic waves is in the range of >=11,000 to <=20,000 m/s, and the silicon carbide sintered compact has density of >=2.9 g/cm3 and a volume resistivity of <=1 Ω.cm. |
