| 摘要 |
An insulation layer 12 is formed on a semiconductor substrate 11 and has a groove 12a for formation of a wiring layer 15 in a predetermined region. A barrier metal is formed on an inner wall of the groove 12a and prevents diffusion of atoms constituting the wiring layer 15, into the insulation layer 12. A seed layer 14 is formed on the barrier metal 13 formed at the bottom of the groove 12a and serves as a kernel of crystal growth when forming the wiring layer 15. The seed layer has crystal orientation of (1 1 1) as a dominant. The wiring layer is formed to bury the groove 12a. Moreover, the wiring layer has crystal orientation of (1 1 1) as a dominant, which suppresses electromigration.
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