Process apparatus and method for improved plasma processing of a substrate

摘要

A processing system for processing a substrate comprises a process chamber having a top, a bottom, and a sidewall for defining a process space therein. The process chamber has an opening in the sidewall thereof for providing access to the process space. A plasma-generating assembly is coupled with the process chamber for creating a plasma within the process space. A substrate support assembly is configured for coupling with the process chamber to support a substrate within the process space. The substrate support assembly extends into the process space through the sidewall opening in the process chamber and seals the sidewall opening to generally isolate the process space from atmosphere.