发明名称 |
Group III nitride LED with undoped cladding layer (5000.137) |
摘要 |
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.
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申请公布号 |
US2002093020(A1) |
申请公布日期 |
2002.07.18 |
申请号 |
US20010760635 |
申请日期 |
2001.01.16 |
申请人 |
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发明人 |
EDMOND JOHN ADAM;DOVERSPIKE KATHLEEN MARIE;KONG HUA-SHUANG;BERGMANN MICHAEL JOHN |
分类号 |
H01L33/06;H01L33/32;H01S5/323;H01S5/343;(IPC1-7):H01L29/06;H01L31/032;H01L31/033;H01L31/072;H01L27/15;H01L31/109;H01L31/12;H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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