| 摘要 |
At least one of the interior wall of a reactor and a susceptor installed in the reactor is coated with an AlaGabIncN (a+b+c=1, a>0) film, which is heated to about 1000° C. or over when a substrate is heated to a predetermined temperature so as to generate the MOCVD reaction between a III raw material gas and a V raw material gas. Therefore, the AlpGaqInrN (p+q+r=1) compound generated from the raw material gases is deposited on the coated AlaGablncN (a+b+c=1, a>0) film, and thus, particles composed of the AlpGaqlnrN compound are not almost created. As a result, the resulting AlxGaylnzN (x+y+z=1) film is not affected by the particles, and can have its desirable quality.
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