Lateral nanostructures by vertical processing

摘要

The present invention is directed to a process for forming one or more lateral nanostructures on a substrate. The process comprises the steps of: providing a substrate; depositing a first layer on the substrate; forming at least one edge on the first layer; depositing at least one separation layer on the first layer; depositing a third layer on the separation layer; and removing a portion of the separation layer and the third layer from the substrate such that a substantially planar surface is formed exposing the first layer, the separation layer, and the third layer.