发明名称 Method for isolating self-aligned contact pads
摘要 A method for isolating SAC pads of a semiconductor device, including determining a chemical mechanical polishing process time necessary to isolate the SAC pads a desired amount by referring to a relationship equation between the extent of isolation of the self-aligned contact pads and the chemical-mechanical polishing process time. The chemical mechanical polishing process is performed for the determined process time on the semiconductor device to isolate the self-aligned contact pads the desired amount. The relationship equation is determined using a test semiconductor device.
申请公布号 US6858452(B2) 申请公布日期 2005.02.22
申请号 US20030688610 申请日期 2003.10.17
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 PARK JEONG-HEON;HONG CHANG-KI;LEE JAE-DONG;PARK YOUNG-RAE;KIM HO-YOUNG
分类号 H01L21/304;H01L21/321;H01L21/60;H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/304
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