发明名称 |
Method for isolating self-aligned contact pads |
摘要 |
A method for isolating SAC pads of a semiconductor device, including determining a chemical mechanical polishing process time necessary to isolate the SAC pads a desired amount by referring to a relationship equation between the extent of isolation of the self-aligned contact pads and the chemical-mechanical polishing process time. The chemical mechanical polishing process is performed for the determined process time on the semiconductor device to isolate the self-aligned contact pads the desired amount. The relationship equation is determined using a test semiconductor device.
|
申请公布号 |
US6858452(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20030688610 |
申请日期 |
2003.10.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
PARK JEONG-HEON;HONG CHANG-KI;LEE JAE-DONG;PARK YOUNG-RAE;KIM HO-YOUNG |
分类号 |
H01L21/304;H01L21/321;H01L21/60;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|