发明名称 |
Multiple frequency plasma chamber with grounding capacitor at cathode |
摘要 |
An apparatus and method for fabricating an electronic workpiece in which first and second electrodes within a plasma chamber are respectively connected to low frequency and high frequency RF power supplies. At least one capacitor is connected between the first electrode and electrical ground. The one or more capacitors can reduce or eliminate the coupling of high frequency RF power to any plasma outside the region directly between the two electrodes. Consequently, the invention can improve the performance of the plasma process by concentrating more of the RF power in the region between the two electrodes.
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申请公布号 |
US6857387(B1) |
申请公布日期 |
2005.02.22 |
申请号 |
US20000563963 |
申请日期 |
2000.05.03 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SUN SHENG;OLSEN JEFF C.;YADAV SANJAY;SHANG QUANYUAN;LAW KAM S. |
分类号 |
H05H1/46;B01J19/08;C23C16/34;C23C16/509;C23C16/52;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23C16/509;C23C16/505;C23F1/00;H01L21/306 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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